Aluminium Nitride

Aluminium Nitride

Introduction:
Aluminum nitride (AlN) is a nitride of aluminum. Its wurtzite phase (w-AlN) is a wide band gap (6.01-6.05 EV at room temperature) semiconductor material, giving it potential application for deep ultraviolet optoelectronics. 

Identification	Aluminium Nitride
Formula:	AlN
Molecular weight:	40.98824
CAS No.:	24304-00-5
Appearance:	Slightly gray to white powder
Crystal:	Hexagonal
Physical Characteristics
Relative density:	3.26
Decompose point:	2450ºC
Thermal conductivity:	100~150W. / m·K
Permittivity:	8.0~9.0
Chemical Characteristics
Item	ALN2-3	ALN4-6	ALN7-11	ALN20-40
Assay(as N):	32.5% min.	32.5% min.	32.5% min.	32.5% min.
O:	1.0% max.	0.5% max.	0.4% max.	0.3% max.
Fe:	1.0% max.	0.5% max.	0.05%max.	0.02% max.
C:	0.05% max.	0.04%max.	0.03%max.	0.02% max.
Particle size (D50):	2~3um	4~6um	7~11um	20~40um
Package:	In 1kg net aluminium foil bag And 30kg net per carton
Application

PACKAGING & USAGE: 
In 1kg net plastic bag and 30kg per carton

General Characteristics of AlN: 
Aluminum nitride is stable at high temperatures in inert atmospheres and melts at 2800 °C. In a vacuum, AlN decomposes at ~1800 °C. In the air, surface oxidation occurs above 700 °C, and even at room temperature, surface oxide layers of 5-10 nm have been detected. This oxide layer protects the material up to 1370 °C. Above this temperature bulk oxidation occurs. Aluminum nitride is stable in hydrogen and carbon dioxide atmospheres up to 980 °C. 
The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalies through attack on the aluminium nitride grains. The material hydrolyzes slowly in water. Aluminum nitride is resistant to attack from most molten salts, including chlorides and cryolite. 

Application: 
Circuit substrates of semiconductor modules and IC packages. 
Heat sink materials for power transistors, thyristors, LDs and LEDs. 
Crucibles for molten metals, vacuum deposition and preparing single crystals. 
Window materials for infrared and radar applications. 
Electronic parts where electrical insulation and heat dissipation are required. 
Special refractory parts such as protective tubes. 
Build piezoelectric micromachined ultrasound transducers
Surface acoustic wave sensors (SAWs) deposited on silicon wafers
RF filter also called a thin film bulk acoustic resonator (FBAR). 
Opto-electronics, 
Dielectric layers in optical storage media, 
Electronic substrates, chip carriers where high thermal conductivity is essential, 
Military applications, 
As a crucible to grow crystals of gallium arsenide, 
Steel and semiconductor manufacturing. 

Our Company, Qingdao Terio Corporation
Founded in 1996, Qingdao Terio Corporation is a diversified international chemical group with a strong reputation in producing Aluminium, Zirconium, Titanium, Barium, Strontium, Boron compounds. Today, Terio generates 4 factories in China, which qualified by ISO9001-SGS, ISO14001-SGS. 
Products are exported widely to Japan, Korea, Germany, The Netherland, United States, Singapore, Taiwan, Poland, Russia, etc. 

Capability: 100mts/ year

Certificate: ISO9001: 2008, ISO14001: 2008, OHSAS 18001: 2007

Our main products: 
Hexagonal Boron nitride (HBN) powder, 
Boron amorphous powder, 
Aluninium nitride(AlN), 
Beta-Silicon carbide (carborundum)
Titanium Boron, 
Zirconium Boron, 
Zirconium dioxide etc. 

Contact detail: 
Mr. Nickle Shang (Sales Manager)
Qingdao Terio Corporation
18/A, Huaren International Building, 
2A Shandong Road, Qingdao, China 266071
Tel: 86-532-83893692 Fax: 86-532-83893695
Moible phone: +86-1396 4283 007
www. terio. cn