Product Specifications
| Markets: |
North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe |
| Manufacturing Technology: |
Optoelectronic Semiconductor |
| Material: |
Compound Semiconductor |
| Type: |
Semi-Insulating |
| Package: |
Fty Vacuum Package |
| Application: |
Communication, Radar, Aircraft, Electric Vehicl... |
Product Description
GaN-Based Epitaxial on Sapphire Substrates 4''
GaN has excellent properties of wide band gap, strong breakdown, high thermal conductivity, high speed of electron mobility, resistance of radiation, stability. GaN-based is good for electron devices of high frequencies, high power, high speed and low consumption.
We are devoted to the R&D, manufacture and sales of the second and three generation of semiconductor powder, wafer, epitaxial, substrates and devices.
Our main products are: 3-4'' SiC wafers, GaN wafers, InP wafers, GaSb wafers, SiC powder, SiC-SiC epitaxial.
