Product Specifications
| Material: |
Compound Semiconductor |
Product Description
A diode bridge is an arrangement of four (or more) diodes in a bridge circuit configuration that provides the same polarity of output for either polarity of input.
When used in its most common application, for conversion of an alternating current (AC) input into a direct current (DC) output, it is known as a bridge rectifier.
A bridge rectifier provides full-wave rectification from a two-wire AC input, resulting in lower cost and weight as compared to a rectifier with a 3-wire input from a transformer with a center-tapped secondary winding.
Product Feature
1) Recommended for non-automatic applications.
2) Ideal for & save space on printed circuit board.
3) Applicable for automatic insertion.
4) Reliable low cost construction utilizing molded plastic technology results in inexpensive product.
5) Glass passivated chip junctions.
6) Lead-free parts meet RoHS requirments.
|
IO(A) |
VR(V) |
VF(Max) @25°C |
IR(Max) @25°C |
IFSM(A) |
Package |
|
VFM(V) |
IFM(A) |
IR(uA) |
VR(V) |
|
0.8 |
50~1000 |
1.10 |
0.8 |
5.0 |
50~1000 |
40 |
MDS |
|
1.0 |
200~1000 |
0.95 |
1.0 |
10.0 |
200~1000 |
30 |
ABS |
|
1.0 |
50~1000 |
1.05 |
1.0 |
10.0 |
50~1000 |
30 |
DBS/ DF/ DFS |
|
1.0 |
50~1000 |
1.10 |
1.0 |
5.0 |
50~1000 |
30 |
MDS |
|
1.5 |
50~1000 |
1.10 |
1.5 |
10.0 |
50~1000 |
30 |
DF/ DFS |
|
2.0 |
50~1000 |
1.10 |
2.0 |
10.0 |
50~1000 |
60 |
DF/ DFS/ KBP |
|
3.0 |
50~1000 |
1.05 |
3.0 |
10.0 |
50~1000 |
90 |
D3K |
|
4.0 |
50~1000 |
1.10 |
4.0 |
10.0 |
50~1000 |
150 |
KBU/ D3K |
|
4.0 |
50~1000 |
1.05 |
4.0 |
10.0 |
50~1000 |
150 |
GBU |
|
4.0 |
50~1000 |
1.10 |
4.0 |
10.0 |
50~1000 |
125 |
GBL |
|
6.0 |
50~1000 |
1.05 |
6.0 |
10.0 |
50~1000 |
175 |
GBU/ GBJ |
|
8.0 |
50~1000 |
1.10 |
8.0 |
10.0 |
50~1000 |
200 |
GBU/ GBJ |
|
10.0 |
50~1000 |
1.10 |
10.0 |
10.0 |
50~1000 |
200 |
GBU/ GBJ |
|
10.0 |
50~1000 |
1.10 |
10.0 |
10.0 |
50~1000 |
170 |
GBJ |
|
15.0 |
50~1000 |
1.10 |
15.0 |
10.0 |
50~1000 |
220 |
GBJ |
|
25.0 |
50~1000 |
1.10 |
25.0 |
10.0 |
50~1000 |
350 |
GBJ |
The CITC has profound discrete semiconductor components and production process technology and experience based on 400 plus related patents. Its high power Schottky diode structure technology has won the award of excellent BIR manufacturer from the Department of Industrial Technology, MOEA, Taiwan.
CITC's process technology is unique in its applying the semiconductor production process to break the physical constraints bore by traditional Schottky diode components for concurrent Low VF, low leakage current and High breakdown voltage.
In addition to standard Schottky diode products, the CITC can provide Super Low VF (VF<0.32V) and High Power (VB>300V) ones as well as custom products to meet specific customer needs. The super low forward bias and high voltage Schottky diode products are widely adopted not only by domestic but also multiple international firms.
Recently, environment protection, green, energy saving and carbon reduction are highly recognized by every industry as indicated by more demanding energy conversion efficiency of electronic products. The CITC has been undertaking to improve product quality and comply with the RoHS international environment protection standards for Halogen-free process and to develop Schottky diodes of still lower forward bias voltage for better energy conversion efficiency.
