Beijing Century Goldray Semiconductor Co., Ltd >> Fe-Dopant Indium Phosphide (InP) Substrates Semi-Insulating Semiconductor Epitaxy

Fe-Dopant Indium Phosphide (InP) Substrates Semi-Insulating Semiconductor Epitaxy

Fe-Dopant Indium Phosphide (InP) Substrates Semi-Insulating Semiconductor Epitaxy
Supplier: Beijing Century Goldray Semiconductor Co., Ltd
Price: Negotiable/Piece
Min Order: 10/Piece
Quantity::
Trade Terms: FOB,CFR,CIF
contact supplier

Product Specifications

Markets: North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe
Manufacturing Technology: Optoelectronic Semiconductor
Material: Compound Semiconductor
Type: Semi-Insulating
Package: Fty Vacuum Package
Application: Electronic Devices with High Speed, High Velocity

Product Description

Fe-dopant Indium Phosphide (InP) Substrates Semi-insulating Semiconductor Epitaxy

ProductDiameter
(inch)
TypeCarrier concentration(cm-3)Mobility
(cm2 V-1s-1)
Resistivity
(W.cm)
E.P.D.
(cm-2)
Undopant InP2/3N(0.8-2)´1016(3.5- 4) ´103           
 
< 5´104
S-InP2N(0.8-3)´1018(2.0-2.4) ´103
 
< 3´104
(4-8)´1018(1.0-1.6) ´103
 
<6´103
<1´103
3/4(0.8-3)´1018(2.0-2.4) ´103
 
< 5´104
(4-8)´1018(1.0-1.6) ´103
 
<6´103
<1´103
Zn-InP2/3P(0.6-2) ´101870-90
 
< 5´104
(3-6)´101850-70
 
<5´103
Fe-InP2/3/4SI
 
>2000>1´107< 5´104

 
>2000>1´107< 1´104
others
Orientation(100)/(111)±0.5°Flatness(μm)
TTVBowWarp
≤12≤12≤15

 
2"3"4"
Thickness(mm)350±25/2600±25/3"1000±25/4"
Primary flat length (mm) (mm)16±222±232.5±2.5
Secondary flat length (mm)  (mm)8±111±132.5±2.5
Single or double polish, open and use, customer's request is accepted.



We are devoted to the R&D, manufacture and sales of the second and three generation of semiconductor powder, wafer, epitaxial, substrates and devices.

Our main products are: 3-4'' SiC wafers, GaN wafers, InP wafers, GaSb wafers, SiC powder, SiC-SiC epitaxial.

Send your message to this manufacturer

Other Products From This Manufacturer