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Supplier: | Yao Entropy(Shanghai)Electronic and Technology Co., Ltd |
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Price: | US $ 10/Piece |
Min Order: | 10/Piece |
Quantity:: | |
Trade Terms: | FOB |
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Prod Model: | AO9-MC |
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Markets: | North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe |
Manufacturing Technology: | Optoelectronic Semiconductor |
Material: | Compound Semiconductor |
Type: | N-type Semiconductor |
Package: | Ceramic Package |
Model: | Ao9-Mc |
Brand: | Entropy |
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Short circuit Current | ISC | Ev=100lx fc=2856k* | 1.6 | µA | ||
Isc Tempereture Coefficient | TC Isc | 2856k | 1.1 | %/ºC | ||
Open Circuit Voitage | Voc | Ev=100lx fc=2856k* | 216 | mV | ||
Voc Tempereture Coefficient | TC Voc | 2856k | -2.2 | mV/ºC | ||
Dark current | ID | VR=10mV | 50 | pA | ||
VR=10V | 480 | |||||
Rise time | tR | VR=5V;λ=850nm;RL=50Ω | 360 | ns | ||
Tempcoeffi-cient of ID TCID | 0.18 | times/ºC | ||||
Reverse breakdown voltage | V(BR)R | IR=100µA Ev=0lx | 30 | V | ||
Junction Capacitance | CJ | VR=0V f=1MHz | 33 | pA | ||
VR=10V f=1MHz | 8.2 | |||||
Photo sensitivity | SR | 460nm | 0.17 | A/W | ||
550nm | 0.19 | |||||
Spectral Application Range | λrange | 300 | 800 | nm | ||
Spectral Response-Peak | λp | 550 | nm | |||
Shunt resistance | Rsh | VR=10mV | 0.2 | GΩ | ||
Rsh Tempereture Coefficient | TC Rsh | 0.18 | %/ºC | |||
Angular Resp 50% Resp Pt | θ1/2 | ±60 | Degrees | |||
Noise Epuivalent Power | NEP | VR =10V λ=550nm | 5.9×10-14 | W/Hz1/2 | ||
Specific Detectivity | D* | VR =10V λ=550nm | 5.1×1012 | cm(Hz/W)1/2 |
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Short circuit Current | ISC | Ev=100lx fc=2856k* | 1.6 | µA | ||
Isc Tempereture Coefficient | TC Isc | 2856k | 1.1 | %/ºC | ||
Open Circuit Voitage | Voc | Ev=100lx fc=2856k* | 216 | mV | ||
Voc Tempereture Coefficient | TC Voc | 2856k | -2.2 | mV/ºC | ||
Dark current | ID | VR=10mV | 50 | pA | ||
VR=10V | 480 | |||||
Rise time | tR | VR=5V;λ=850nm;RL=50Ω | 360 | ns | ||
Tempcoeffi-cient of ID TCID | 0.18 | times/ºC | ||||
Reverse breakdown voltage | V(BR)R | IR=100µA Ev=0lx | 30 | V | ||
Junction Capacitance | CJ | VR=0V f=1MHz | 33 | pA | ||
VR=10V f=1MHz | 8.2 | |||||
Photo sensitivity | SR | 460nm | 0.17 | A/W | ||
550nm | 0.19 | |||||
Spectral Application Range | λrange | 300 | 800 | nm | ||
Spectral Response-Peak | λp | 550 | nm | |||
Shunt resistance | Rsh | VR=10mV | 0.2 | GΩ | ||
Rsh Tempereture Coefficient | TC Rsh | 0.18 | %/ºC | |||
Angular Resp 50% Resp Pt | θ1/2 | ±60 | Degrees | |||
Noise Epuivalent Power | NEP | VR =10V λ=550nm | 5.9×10-14 | W/Hz1/2 | ||
Specific Detectivity | D* | VR =10V λ=550nm | 5.1×1012 | cm(Hz/W)1/2 |
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