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| Supplier: | Yao Entropy(Shanghai)Electronic and Technology Co., Ltd |
|---|---|
| Price: | US $ 10/Piece |
| Min Order: | 10/Piece |
| Quantity:: | |
| Trade Terms: | FOB |
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| Prod Model: | AO9-MC |
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| Markets: | North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe |
| Manufacturing Technology: | Optoelectronic Semiconductor |
| Material: | Compound Semiconductor |
| Type: | N-type Semiconductor |
| Package: | Ceramic Package |
| Model: | Ao9-Mc |
| Brand: | Entropy |
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Short circuit Current | ISC | Ev=100lx fc=2856k* | 1.6 | µA | ||
| Isc Tempereture Coefficient | TC Isc | 2856k | 1.1 | %/ºC | ||
| Open Circuit Voitage | Voc | Ev=100lx fc=2856k* | 216 | mV | ||
| Voc Tempereture Coefficient | TC Voc | 2856k | -2.2 | mV/ºC | ||
| Dark current | ID | VR=10mV | 50 | pA | ||
| VR=10V | 480 | |||||
| Rise time | tR | VR=5V;λ=850nm;RL=50Ω | 360 | ns | ||
| Tempcoeffi-cient of ID TCID | 0.18 | times/ºC | ||||
| Reverse breakdown voltage | V(BR)R | IR=100µA Ev=0lx | 30 | V | ||
| Junction Capacitance | CJ | VR=0V f=1MHz | 33 | pA | ||
| VR=10V f=1MHz | 8.2 | |||||
| Photo sensitivity | SR | 460nm | 0.17 | A/W | ||
| 550nm | 0.19 | |||||
| Spectral Application Range | λrange | 300 | 800 | nm | ||
| Spectral Response-Peak | λp | 550 | nm | |||
| Shunt resistance | Rsh | VR=10mV | 0.2 | GΩ | ||
| Rsh Tempereture Coefficient | TC Rsh | 0.18 | %/ºC | |||
| Angular Resp 50% Resp Pt | θ1/2 | ±60 | Degrees | |||
| Noise Epuivalent Power | NEP | VR =10V λ=550nm | 5.9×10-14 | W/Hz1/2 | ||
| Specific Detectivity | D* | VR =10V λ=550nm | 5.1×1012 | cm(Hz/W)1/2 |
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Short circuit Current | ISC | Ev=100lx fc=2856k* | 1.6 | µA | ||
| Isc Tempereture Coefficient | TC Isc | 2856k | 1.1 | %/ºC | ||
| Open Circuit Voitage | Voc | Ev=100lx fc=2856k* | 216 | mV | ||
| Voc Tempereture Coefficient | TC Voc | 2856k | -2.2 | mV/ºC | ||
| Dark current | ID | VR=10mV | 50 | pA | ||
| VR=10V | 480 | |||||
| Rise time | tR | VR=5V;λ=850nm;RL=50Ω | 360 | ns | ||
| Tempcoeffi-cient of ID TCID | 0.18 | times/ºC | ||||
| Reverse breakdown voltage | V(BR)R | IR=100µA Ev=0lx | 30 | V | ||
| Junction Capacitance | CJ | VR=0V f=1MHz | 33 | pA | ||
| VR=10V f=1MHz | 8.2 | |||||
| Photo sensitivity | SR | 460nm | 0.17 | A/W | ||
| 550nm | 0.19 | |||||
| Spectral Application Range | λrange | 300 | 800 | nm | ||
| Spectral Response-Peak | λp | 550 | nm | |||
| Shunt resistance | Rsh | VR=10mV | 0.2 | GΩ | ||
| Rsh Tempereture Coefficient | TC Rsh | 0.18 | %/ºC | |||
| Angular Resp 50% Resp Pt | θ1/2 | ±60 | Degrees | |||
| Noise Epuivalent Power | NEP | VR =10V λ=550nm | 5.9×10-14 | W/Hz1/2 | ||
| Specific Detectivity | D* | VR =10V λ=550nm | 5.1×1012 | cm(Hz/W)1/2 |
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