ISC Silicon PNP Darlington Power Transistor (BD646)
Product Specifications
| Prod Model: |
BD646 |
| Markets: |
North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe |
| Material: |
Element Semiconductor |
| Type: |
P-type Semiconductor |
| Manufacturing Technology: |
Discrete Device |
Product Description
Isc Silicon PNP Darlington Power Transistor BD646
DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
High DC Current Gain
: HFE= 750(Min) @IC= -3A
Low Saturation Voltage
Complement to Type BD645
APPLICATIONS
Designed for use as complementary AF push-pull output Stage applications
Inchange Semiconductor Company Limited being supplying power transistors for 20 years, ongoing relationships with more than 1000 major customers in over 30 countries.
Isc transistors product line:
2N, 2SA, 2SB, 2SC, 2SD, BD, BDS, BDT, BDV, BDW, BDX, BDY, BU, BUD, BUF, BUH, BUL, BUP, BUR, BUS, BUT, BUV, BUW, BUX, BUY, TIP, S, MJ, MJE series.
Isc main products:
High-power transistors, darlington power transistors, high-voltage transistors, high-frequency, high-gain transistors, switching transistors, RF, small-signal transistors, SCR, triac, mosfet, three-terminal regulator, IC, thick-film hybrid integrated circuits and so on.
ISC's main objective is to provide good quality products, on good prices and fast delivery. Satisfying customers' demands is our doing all the time.
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