Product Specifications
| Prod Model: |
50N06_N_Channel_Metal_Oxide |
| Markets: |
North America,Southeast Asia,Mid East,Eastern Asia,Western Europe |
| Package: |
DIP(',Dual In-line Package) |
| Material: |
Compound Semiconductor |
| Type: |
Intrinsic Semiconductor |
| Manufacturing Technology: |
Optoelectronic Semiconductor |
Product Description
CSP 50N06, field effect transistor
1. Vdss: 60 v
2. RDS(on): 18 mill-ohm
3. ID: 50A; Package: To -220
4. Certification: RoHS compliant
5. Features
5.1 RDS(on)=23m@vgs=10 v
5.2 ultra low gatecharge (typical 30 nc)
5.3 low reverse transfer capacitance( crss = typical 80 pF)
5.4 fast swithching capability
5.5 100% avalanche energy specified
5.6 improved dwdt capability
6. Description:
The csi50N06 is three -terminal silion device with current conduction capability of about 50A, fast swithching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast and low power appliance
We are a leading manufacture of diode, bridge rectifier, inductance, transformers, and power supply, and we can also provide products as the customer requested, our products all have passed ISO9001: 2008 Certificate, Reach Compliance and RoHS Compliant.
