Power Semiconductor Devices

Product Specifications

Prod Model:	Power semiconductor devices
Markets:	North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe
Type:	Intrinsic Semiconductor
Manufacturing Technology:	Power Module Transistor
Material:	Ceramics
Package:	Bubble Chamber
Signal Processing:	Voltage and Electric Current Signal

Product Description

There are two alternative thickness, thin silicon 26.5 mm, 35 mm thick silicon, error 0.5 mm, lead length standard configuration up to 400 mm high temperature silver-plated wire,
Ordering Information: Whether ordering what type of thyristor, must provide the following parameters,
1, the current and voltage values.
2, the cathode (that is, large metal end cap) diameter metal sheet.
3, the maximum outer diameter of the anode mesa.
4, the thickness of the thyristor, is 26.5 or 35mm.
5, the length of the lead.
Features:
Distributed gate design di / dt capability High switching losses off time is short

The main application areas:

HVDC transmission traction and static var compensator induction heating soft-start high-current power excitation