RF Power Field Effect Transistors (MRFE6VP6300H)

Product Specifications

Prod Model:	MRFE6VP6300H
Markets:	North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe

Product Description

These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
And radio/land mobile applications. They are unmatched input and output
Designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Capable of Handling a Load Mismatch of 65: 1 VSWR, @ 50 Vdc, 230 MHz,
At all Phase Angles
300 Watts CW Output Power
300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Capable of 300 Watts CW Operation
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
? Characterized with Series Equivalent Large--Signal Impedance Parameters
? RoHS Compliant
? NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
? NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.