Product Specifications
| Material: |
Compound Semiconductor |
Product Description
The Schottky diode is a semiconductor diode with a low forward voltage drop and a very fast switching action...
When current flows through a diode there is a small voltage drop across the diode terminals. A normal silicon diode has a voltage drop between 0.6~1.7 volts, while a Schottky diode voltage drop is between approximately 0.15~0.45 volts. This lower voltage drop can provide higher switching speed and better system efficiency.
Product Feature
Low forward voltage drop
High Surge Capability and High Current Capability
For Surface Mounted Applications
High Conductance
Guard Ring Construction for Transient Protection
Product Specification/Models
IO = 0.03~40A
VR = 20~200V
Applications
Voltage clamping
While standard silicon diodes have a forward voltage drop of about 0.7 volts and germanium diodes 0.3 volts, Schottky diodes' voltage drop at forward biases of around 1 mA is in the range 0.15V to 0.46V, which makes them useful in voltage clamping applications and prevention of transistor saturation. This is due to the higher current density in the Schottky diode.
Reverse current and discharge protection
Because of a Schottky diode's low forward voltage drop, less energy is wasted as heat making them the most efficient choice for applications sensitive to efficiency. For instance, they are used in stand-alone ("off-grid") photovoltaic (PV) systems to prevent batteries from discharging through the solar panels at night, and in grid-connected systems with multiple strings connected in parallel, in order to prevent reverse current flowing from adjacent strings through shaded strings if the bypass diodes have failed.
Power supply
They are also used as rectifiers in switched-mode power supplies; The low forward voltage and fast recovery time leads to increased efficiency.
Schottky diodes can be used in power supply "OR"ing circuits in products that have both an internal battery and a mains adapter input, or similar. However, the high reverse leakage current presents a problem in this case, as any high-impedance voltage sensing circuit (e. G. Monitoring the battery voltage or detecting whether a mains adaptor is present) will see the voltage from the other power source through the diode leakage.
|
Item |
IO(A) |
VR(V) |
VF(Max)@25°C |
IR(Max)@25°C |
Package |
|
VFM(V) |
IFM(A) |
IR(uA) |
VR(V) |
|
Small Signal |
0.03~3.0 |
20~100 |
0.25~1.0 |
0.01~3.0 |
0.1~500 |
1.5~100 |
SOD-123/ SOD-323/ SOD-523/ SOD-23/ SOT-323/ SOD-123S/ SOD-123ST |
|
Low Power |
1.0~5.0 |
20~200 |
0.45~0.9 |
1.0~5.0 |
500 |
20~200 |
DO-41/ DO-15/ DO-27S/ SMAS/ SMA/ SMB/ SMC |
|
High Power |
10~30 |
40~60 |
0.55~0.7 |
5.0 |
500 |
40~60 |
TO-220AB/ ITO-220AB/ TO-220AB/ ITO220AB/ TO-263 |
|
10~30 |
100~200 |
0.81~0.9 |
5.0 |
100 |
100~200 |
|
Low VF |
0.5~3.0 |
20~40 |
0.38~0.4 |
0.5~3.0 |
1000 |
20~40 |
SOD-123S/ SOD-123ST/ SMA/ SMAS |
|
Ultra Low VF |
1.0~2.0 |
20~40 |
0.37 |
1.0~2.0 |
1000 |
20~40 |
SMA/ SMAS |
|
Super Low VF |
1.0 |
20~40 |
0.33 |
1.0 |
1000 |
20~40 |
SMA/ SMAS/ SMB/ SMC |
|
Low VF/ IR |
1.0~3.0 |
20~200 |
0.4~0.85 |
1.0~3.0 |
500 |
20~200 |
SMA/ SMAS/ SMB/ SMC |
|
Ultra Low VF/ IR |
1.0~2.0 |
20~40 |
0.35~0.5 |
1.0~2.0 |
500 |
20~60 |
SMA/ SMAS/ SMB/ SMC |
The CITC has profound discrete semiconductor components and production process technology and experience based on 400 plus related patents. Its high power Schottky diode structure technology has won the award of excellent BIR manufacturer from the Department of Industrial Technology, MOEA, Taiwan.
CITC's process technology is unique in its applying the semiconductor production process to break the physical constraints bore by traditional Schottky diode components for concurrent Low VF, low leakage current and High breakdown voltage.
In addition to standard Schottky diode products, the CITC can provide Super Low VF (VF<0.32V) and High Power (VB>300V) ones as well as custom products to meet specific customer needs. The super low forward bias and high voltage Schottky diode products are widely adopted not only by domestic but also multiple international firms.
Recently, environment protection, green, energy saving and carbon reduction are highly recognized by every industry as indicated by more demanding energy conversion efficiency of electronic products. The CITC has been undertaking to improve product quality and comply with the RoHS international environment protection standards for Halogen-free process and to develop Schottky diodes of still lower forward bias voltage for better energy conversion efficiency.
