Hangzhou Tuozhi Electronic Co., Ltd >> SCR Silicon Controlled Rectifier Module Mtc110A 1600V

SCR Silicon Controlled Rectifier Module Mtc110A 1600V

Name: SCR Silicon Controlled Rectifier Module Mtc110A 1600V
Brand: china-manufacturer-directory.com
SKU: 705243272
Availability: InStock
Rating: 4.4 (41 reviews)

Supplier:	Hangzhou Tuozhi Electronic Co., Ltd
Price:	US $ 12/Piece
Min Order:	1/Piece
Quantity::
Trade Terms:	FOB

Product Specifications

Prod Model:	MTC110
Enter Attribute Here (e.g.: Size):	Enter Value Here (e.g.: 12 Inches)

Product Description

Style No.: MTC110

Features:
Isolation voltage: 2500V~
Thyristor for line frequency
Planar passivated chip
Long-team stability and advanced power cycling
Small and light, industry standard outline and RoHS compliant

Application:
Heating controller, AC/DC motor control, Rectifying power, AC switch power

Specification:

Symbol	Definition	Test Condition	Junction temp. Tj (ºC)	Parameter value			Unit
Symbol	Definition	Test Condition	Junction temp. Tj (ºC)	Min	Typical	Max	Unit
IT(AV)	Average on-state current	180°sinusoidal half-wave, 50hz single-sided heat dissipation, Tc=85ºC	125			110	A
IT(RMS)	RMS current		125			173	A
VDRM VRRM	Off-state repetitive peak voltage Reverse repetitive peak voltage	VDRM&VRRM tp=10ms VDSM&VRSM=VDRM&VRRM+200V	125	600	1600	1800	V
IDRM IRRM	Off-state repetitive peak current Reverse repetitive peak current	VDM=VDRM VRM=VRRM	125			12	mA
ITSM	On-state non-repetitive surge current	10ms bottom width, sinusoidal half-wave	125			2.4	KA
I2t	surge current average time integration	VR=0.6VRRM	125			29	103A2S
VTO	threshold voltage					0.8	V
RT	slope resistance		125			2.29	mΩ
VTM	On-state peak voltage	ITM=330A	25		1.5	1.6	V
dv/dt	Off-state critical of rise rate of voltage	VDM=67%VDRM	125			800	V/μs
di/dt	On-state critical of rise rate of current	ITM=330A, Gate trigger current amplitude IGM=1.5A, gate trigger current rise time, tr≤0.5μs	125			100	A/μs
IGT	Gate trigger current			30	40	100	mA
VGT	Gate trigger voltage	VA=12V, IA=1A	25	0.8	1.0	2.5	V
IH	Holding current			20		100	mA
VGD	Gate non-trigger voltage	VDM=67%VDRM	125			0.2	V
Rth(j-c)	thermal impedance junction to case	180°sinusoidal half-wave, Single-sided heat dissipation				0.25	ºC/W
Rth(c-h)	thermal impedance case to heatsink	180°sinusoidal half-wave, Single-sided heat dissipation				0.15	ºC/W
Viso	Insulation voltage	50HZ, R.M.S, t=1min Iiso:1Ma(max)		2500			V
Fm	mounting torque(M5) mounting torque(M6)				2.0 3.0		N·m N·m
Tsbg	Storage temperature			-40		125	ºC
Wt	weight				140		g

Hangzhou Tuozhi Electronic Co., Ltd is a specialized manufacturer of electric elements. We have Advanced DC electrical components research and development laboratories and reliability experiment platform.

Hangzhou Tuozhi Electronic Co., Ltd located in Hangzhou, Zhejiang, China, have been specialized in semiconductor area almost 10 years, and we have got ISO9001, ISO14001, RoHS and CE certificate.

The main products include:

Thyristor module

Rectifier module

Thyristor/Diode module

Single-phase rectifier/three-phase rectifier

Bridge Rectifiers

Super Fast Recovery Rectifiers

Quick thyristor

MOS relay

Solid State Relay

Three-phase solid state relay elements

Smart voltage adjustment module

SCR phase-shift voltage regulator

Heatsinks

Instrument and apparatus

Photovoltaic defence-attack diode module

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