Beijing Century Goldray Semiconductor Co., Ltd >> 4h N-Type Sic (Silicon Carbide) Substrates Wafer 2''/3''/4''

4h N-Type Sic (Silicon Carbide) Substrates Wafer 2''/3''/4''

Name: 4h N-Type Sic (Silicon Carbide) Substrates Wafer 2''/3''/4''
Brand: china-manufacturer-directory.com
SKU: 771602045
Availability: InStock
Rating: 4.8 (134 reviews)

Supplier:	Beijing Century Goldray Semiconductor Co., Ltd
Price:	Negotiable/Piece
Min Order:	10/Piece
Quantity::
Trade Terms:	FOB,CFR,EXW

Product Specifications

Markets:	North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe
Manufacturing Technology:	Optoelectronic Semiconductor
Material:	Compound Semiconductor
Type:	N-type Semiconductor
Package:	Fty Vacuum Package
Application:	Spacecraft, Oil Exploration, Optical Storage...

Product Description

Due to Silicon Carbide physical and electronic properties, SiC based devices are well suitable for short wave length optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices.

We are devoted to the R&D, manufacture and sales of the second and three generation of semiconductor powder, wafer, epitaxial, substrates and devices.

Our main products are: 3-4'' SiC wafers, GaN wafers, InP wafers, GaSb wafers, SiC powder, SiC-SiC epitaxial.