Beijing Century Goldray Semiconductor Co., Ltd >> GaN-Basedepitaxial on Sic Substrates 4''

GaN-Basedepitaxial on Sic Substrates 4''

Name: GaN-Basedepitaxial on Sic Substrates 4''
Brand: china-manufacturer-directory.com
SKU: 771615625
Availability: InStock
Rating: 5 (32 reviews)

Supplier:	Beijing Century Goldray Semiconductor Co., Ltd
Price:	Negotiable/Piece
Min Order:	10/Piece
Quantity::
Trade Terms:	FOB,CFR,CIF

Product Specifications

Markets:	North America,South America,Eastern Europe,Southeast Asia,Africa,Oceania,Mid East,Eastern Asia,Western Europe
Manufacturing Technology:	Optoelectronic Semiconductor
Material:	Compound Semiconductor
Type:	Semi-Insulating
Package:	Fty Vacuum Package
Application:	Communication, Radar, Aircraft, Electric Vehicl...

Product Description

GaN-BasedEpitaxial on SiC Substrates 4''

GaN has excellent properties of wide band gap, strong breakdown, high thermal conductivity, high speed of electron mobility, resistance of radiation, stability. GaN-based is good for electron devices of high frequencies, high power, high speed and low consumption.

We are devoted to the R&D, manufacture and sales of the second and three generation of semiconductor powder, wafer, epitaxial, substrates and devices.

Our main products are: 3-4'' SiC wafers, GaN wafers, InP wafers, GaSb wafers, SiC powder, SiC-SiC epitaxial.