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LM3S9B90-IQC80-C5 TI QFP 14+New & OriginalROHSDelivery:asap
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The MA Serise That 6.6KW peak pulse power capability at 10/1000μs waveform,repetition rate (duty cycle): 0.01%,Low incremental surge impedance,Excellent clamping capability,Photo Glass and LPCVD process,High Temperature soldering guarabteed 265ºC/10 seconds,Fast response time: typically le
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High brightness 5mm round LEDsFeatures:Available color: Red, green, blue, yellow, amber,Dual color, or RGBHigh bright outputLarge view angleLow power consumptionHigh reliability and long lifeDescriptions:Device Outline: 5mm Round TypeLens type: Water clearViewing agnle: 15-60 deg.For more informatio
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Single Phase Power Diode Module 50A 1600V Mdq50-16
StyleNo.:MDQ50Features:Isolationvoltage:2500V~Planarpassivatedchips.Lowforwardvoltagedrop.Packagewithscrewterminals,spaceandweightsaving.Improvedtemperatureandpowercycling.Application:PWMfrequencyconverterrectifyingpower,DCPower,Rectifyingpower,BatteryChargingDCpoweretc.Specification:SymbolDefinitio
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Top Quality 2clg150kv/1.0A Single-Phase Bridge Rectifier
Feature:1.Avalanchecharacteristic2.Moresizeavailable3.Vacuummolded,non-corrosiveepoxyresincase4.Tj:-40ºC~+125ºCApplication:1.Highvoltagerectifierusedinelectrostaticcleaning2.Highvoltagetestingequipment3.GeneralpurposehighvoltagerectifierExtreme(AbsoluteMaximumRating)ItemSymbolUnitCondition
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Standard Specifications for 2 in. - 6 in. FZ Silicon Wafers Property 2 in. 3 in. 4 in. 5 in. 6 in. Grade Prime Prime Prime Prime Prime Diameter 50.8 ± 0.4 mm 76.2 ± 0.5 mm 100 ± 0.5 mm 125 ± 0.5 mm 150 ± 0.4 mm Thickness 279 ± 25 μm 381 ± 25 μm
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Schottky Barrier Rectifier (SBL 1045)
Liteon rectifier SBL 1045 Features: Metal of silicon rectifier, majority of carrier conduction Guard ring of transient protection Low power loss high efficiency High surge capacity For use in high frequency low voltage inverter
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Thermoelectric Cooling Module (TEC3-11904T125)
Thermoelectric cooling module, peltier element Model: TEC3-11904T125 Hot side temperature is 25 C, Imax: 4A, Umax: 7.7V Qmax: 6.5W Delta T max: 95 C Size: Base: 30X30mm, Middle: 20X20mm, top: 15X15mm, Height: 10.00mm. Ceramic Material: Alumina (Al2O3) Solder Construction: 138 C, Bismuth Tin (BiSn)
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-Conform to IEC 60269, UL 248 -Rated Voltage: 500VAC/DC, 700VAC/DC -Rated Current: 6-1200A -Protection: AR -RoHS compliance
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405nm Violet Laser Module (EL405D10IG1)
1, ClassIIIa 2, mini violet laser diode module 3, wide operate tem. 4, FDA ISO. etc 5, Industrial level quality 405nm Violet Laser Module EL405D10IG1 Features Wavelength: 405 nm High brightness, optical output power: 1.0 mW Low operating current: < 55mA Low operating voltage: 6VDC Class IIIa lase
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Mini Laser Long Life Span&Low Powder Consumption
Sample order are glad to be offer too. Wish would get your enquiry Before our Quotation pls confirm the specifications as following, 1 Output power 2 Housing Dimension 3 Working distance 4 Beam size/Line thickness 5 Wavelength Sample&Small order are glad to be offer. Wish would get your enquiry M
Related Products: Mini Laser for Marking Machine manufacturer ,Mini Laser manufacturer ,Mini Laser in Machine manufacturer ,
5W Linear COB LED (YO-P5206F**-5W)
Our high power COB LEDs, use silica gel solid crystal and silica gel Packages, effectively improve the heat dissipation performance. High Reliability high brightness, and low-light decay Feature 80-90lm/w COB 5W LED light source Low Power Consumption Long Operating Lifespan Easy Installation Specs:
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Schottky Barrier Rectifier Ss14
Key Specifications/Special Features of SS14: Plastic package has underwriters laboratory Flammability classification 94V-0 For surface mounted applications Metal silicon junction, majority carrier conduction Built-in strain relief, ideal for automated placement Low-power loss, high-efficiency High-
Related Products: Ss14 manufacturer ,1a 40v Sma manufacturer ,Schottky Barrier Diode manufacturer ,
Semiconductor Fuse (RS8 L1A5N)
- For semiconduction part protection - Buss-bar contact type - Installation by bolting - Function: AR or gR - Rated voltage up to 2250V a. C. - Rated current up to 1800Amp. - Break Capacity up to 100kA - Assistant microswith 1NO+1NC or 2NO+NC for selective - H. R. C. - Small cubage, large capability
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Semiconductor Fuse (RS8 P2b205S)
- For semiconduction part protection - Flush end contact type - Double body style - Installation by bolting - Function: AR or gR - Rated voltage up to 2250V a. C. - Rated current up to 5000Amp. - Break Capacity up to 100kA - Assistant microswith 1NO+1NC or 2NO+NC for selective - H. R. C. - Small cub
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Maxim New Original IC Max3232ewe+T with Sop-16 Packing
Product Description 1. Fast delivery 2. Low price 3. Original new or second-hand original 4. Function ensured 5. Excellent condition, production-ready 6. Refund/replacement warranty included 7. Made in Japan Service: 1. Patient. Attentive service from beginning to the end, we depend on our custome
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BLF178, BLF178XRBrand: MICD/C: 2013+Qty in stock: more than 50KpcsLead time: 1day for own stockRemark: New parts from factory; 100% good qualityWarranty: 90 days warrantyPackage: standardPayment: T/T western Union, Paypal, Visa, Master Card.Shipment: UPS, DHL, TNT, FEDEX or by your own forwarder
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TOSHIBA new original IC 02CZ18-Y With SOT-23 packing
1. Fast delivery 2. Low price 3. Original new or second-hand original 4. Function ensured 5. Excellent condition, production-ready 6. Refund/replacement warranty included 7. Made in Japan Service: 1. Patient. Attentive service from beginning to the end, we depend on our customer satisfaction to su
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Indopant Indium Phosphide (InP) Substrates Wafers Semiconductor Epitaxy
Indopant Indium Phosphide (InP) Substrates Wafers Semiconductor Epitaxy.ProductDiameter(inch)TypeCarrier concentration(cm-3)Mobility(cm2 V-1s-1)Resistivity(W.cm)E.P.D.(cm-2)Undopant InP2/3N(0.8-2)´1016(3.5- 4) ´103< 5´104S-InP2N(0.8-3)´1018(2.0-2.4) ´103< 3´104(4-
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