Standard Specifications for 2 in. - 6 in. FZ Silicon Wafers
Property 2 in. 3 in. 4 in. 5 in. 6 in.
Grade Prime Prime Prime Prime Prime
Diameter 50.8 ± 0.4 mm 76.2 ± 0.5 mm 100 ± 0.5 mm 125 ± 0.5 mm 150 ± 0.4 mm
Thickness 279 ± 25 μm 381 ± 25 μm 525 ± 25 μm 525 ± 20 μm 625 ± 20 μm
Orientation <100> / <111>
Conductivity P-Type / N-Type
Dopant Boron / Phos / Undoped
Resistivity 10 - 10, 000 Ω. Cm
Primary Flat 16.0 ± 2.0 mm 22.5 ± 2.5 mm 32.5 ± 2.5 mm 42.5 ± 2.5 mm 57.5 ± 2.5 mm
TTV, Max. 10 μm 10 μm 10 μm 10 μm 10 μm
Bow, Max. 30 μm 30 μm 40 μm 40 μm 60 μm
Warp, Max 30 μm 30 μm 40 μm 40 μm 60 μm
Surface Finished P/E, P/P, L/L, E/E, C/C
Note: P = Polished, E = Etched, L = Lapped, C = Cut
Pluto New Technology Co., Ltd, a global semiconductor material supplier, located in Guangzhou city, is committed to providing customers with semiconductor materials solutions, services for global semiconductor companies and research institutions.
As an integrated Semi-conductor company, we are cooperating with many global plants to guarantee wide-covered and outstanding products.
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We mainly offer FZ silicon wafers and ingots, CZ silicon wafers and ingots, EPI wafers, SOI wafers, PVD target materials, monocrystal germanium wafers, sapphire wafer, silicon carbide wafer, gallium arsenide, indium phosphide, gallium nitride and other semiconductor materials.
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