Product Specifications
Markets: |
North America,Eastern Europe,Southeast Asia,Western Europe |
Material: |
Compound Semiconductor |
Package: |
Cassette |
Product Description
Standard Specifications for 2 in. - 4 in. SiC Wafers
Property 2 in. 3 in. 4 in.
Growth Method PVT PVT PVT
Grade Production / Research / Dummy Production / Research / Dummy Production / Research / Dummy
Diameter 50.8 ± 0.4 mm 76.2 ± 0.5 mm 100 ± 0.5 mm
Thickness 330 ± 25 μm 350 ± 25 μm 350 ± 25 μm
Orientation <0001> <0001> <0001>
Conductivity 4H-N / 4H-SI / 6H-N / 6H-SI 4H-N / 4H-SI / 6H-N / 6H-SI 4H-N / 4H-SI / 6H-N / 6H-SI
Dopant Nitrogen / Semi-insulating Nitrogen / Semi-insulating Nitrogen / Semi-insulating
Resistivity 0.01 - 0.2 Ω. Cm / > 1E5 Ω. Cm 0.01 - 0.2 Ω. Cm / > 1E5 Ω. Cm 0.01 - 0.2 Ω. Cm / > 1E5 Ω. Cm
Micropipe Density <= 10 / 30 / 100 cm-2 <= 10 / 30 / 100 cm-2 <= 10 / 30 / 100 cm-2
Usable Area >= 90% / 80% / 70% >= 90% / 80% / 70% >= 90% / 80% / 70%
Primary Flat 15.88 ± 1.65 mm 22.22 ± 3.17 mm 32.5 ± 2.5 mm
Secondary Flat 8.0 ± 1.65 mm 11.18 ± 1.52 mm 18.0 ± 2.0 mm
TTV, Max. 25 μm 25 μm 45 μm
Bow / Warp, Max. 25 μm 35 μm 45 μm
Surface Finished P/L, P/P, L/L, C/C P/L, P/P, L/L, C/C P/L, P/P, L/L, C/C
Note: P = Polished, L = Lapped, C = Cut
Pluto New Technology Co., Ltd, a global semiconductor material supplier, located in Guangzhou city, is committed to providing customers with semiconductor materials solutions, services for global semiconductor companies and research institutions.
As an integrated Semi-conductor company, we are cooperating with many global plants to guarantee wide-covered and outstanding products.
We are fast and competitive.
We mainly offer FZ silicon wafers and ingots, CZ silicon wafers and ingots, EPI wafers, SOI wafers, PVD target materials, monocrystal germanium wafers, sapphire wafer, silicon carbide wafer, gallium arsenide, indium phosphide, gallium nitride and other semiconductor materials.
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