Product Specifications
| Markets: |
North America,Eastern Europe,Southeast Asia,Western Europe |
| Material: |
Element Semiconductor |
| Package: |
Cassette |
Product Description
Standard Specifications for 3 in. - 8 in. EPI Silicon Wafers
Layer Property 3 in. 4 in. 5 in. 6 in. 8 in.
Substrate Diameter 76.2 ± 0.5 mm 100 ± 0.5 mm 125 ± 0.5 mm 150 ± 0.4 mm 200 ± 0.2 mm
Thickness 381 ± 25 μ M 525 ± 25 μ M 525 ± 20 μ M 625 ± 20 μ M 725 ± 20 μ M
Orientation <100> / <111>
Conductivity P-Type / N-Type
Dopant Boron, Phos, Arsenic, Antimony
Resistivity 0.001 - 5, 000 Ω . Cm
Surface Finished Single-side-polished / Double-sides-polished
EPI Layer Thickness 0.1 - 150 μ M
Orientation <100> / <111>
Conductivity P-Type / N-Type
Dopant Boron, Phosphorus, Arsenic
Resistivity 0.01 - 500 Ω . Cm
Single-layer Structure N-/N+, P-/N+, P-/P+, N-/P+
Double-layer Structure N/N+/N++, N/P/P, P/N/N+
Reactor Batch / Single Wafer
Pluto New Technology Co., Ltd, a global semiconductor material supplier, located in Guangzhou city, is committed to providing customers with semiconductor materials solutions, services for global semiconductor companies and research institutions.
As an integrated Semi-conductor company, we are cooperating with many global plants to guarantee wide-covered and outstanding products.
We are fast and competitive.
We mainly offer FZ silicon wafers and ingots, CZ silicon wafers and ingots, EPI wafers, SOI wafers, PVD target materials, monocrystal germanium wafers, sapphire wafer, silicon carbide wafer, gallium arsenide, indium phosphide, gallium nitride and other semiconductor materials.
Our experienced staffs are willing to respond you with timely and reliable services, do not hesitate to contact us.
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