Standard Specifications for 3 in. - 8 in. SOI Silicon Wafers
Layer Property 3 in. 4 in. 5 in. 6 in. 8 in.
Substrate Diameter 76.2 ± 0.5 mm 100 ± 0.5 mm 125 ± 0.5 mm 150 ± 0.4 mm 200 ± 0.2 mm
Thickness > 300 μm > 300 μm > 400 μm > 400 μm > 500 μm
Orientation <100> / <111>
Conductivity P-Type / N-Type
Dopant Phosphorous, Arsenic, Antimony, Boron
Resistivity 0.001 - 5, 000 Ω. Cm
Surface Finished Single-side-polished / Double-sides-polished
Device Layer Thickness 2 - 50 +/-0.5 μm / 50 - 150 +/-1.0 μm / > 150 +/-2 μm > 6 +/-1.0 μm
Orientation <100> / <111>
Conductivity P-Type / N-Type
Dopant Boron, Phosphorus, Arsenic
Resistivity 0.01 - 5000 Ω. Cm
Oxide Layer Standard 0.5μm, 1μm, and 2μm
Optional 0.1 10μm
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