Product Specifications
| Prod Model: |
CS20L100CT/ CS20L120CT/ CS20L200CT/ CS30L40CT |
| Material: |
Compound Semiconductor |
Product Description
Part No.: CS20L100CT/ CS20L120CT/ CS20L200CT/ CS30L40CT/ CS30L45CT/ CS30L50CT/ CS30L60CT/ CS30L120CT
The Low VF MOS Rectifier offer ultra low forward voltage drop with a selectively rated 200 degrees C maximum junction temperature for improved efficiency and high reliability.
Some features:
1) Very low high-temperature reverse leakage characteristics unlike traditional Schottky rectifiers.
2) Large safe operating area (SOA) with maximum selectively rated 200 degrees C junction temperature for higher reliability.
3) High forward surge current rating (IFSM) to prevent against current surges and lightning strikes.
4) Ideal for standard silicon solar panel applications.
|
Part Number |
IO(A) |
VR(V) |
VF(Max) |
IR(Max) |
IFSM(A) |
Package |
|
Typ(mV) |
Max(mV) |
IFM(A) |
Typ(mA) |
Max(mA) |
VR(V) |
|
CS20L100CT |
20 |
100 |
710 |
750 |
10A @ 25°C |
0.015 |
0.1 |
100V @ 25°C |
250 |
TO-220AB |
|
600 |
640 |
10A @125°C |
|
10 |
100V @ 125°C |
ITO-220AB |
|
CS20L120CT |
20 |
120 |
750 |
790 |
10A @ 25°C |
0.025 |
0.1 |
120V @ 25°C |
180 |
TO-220AB |
|
620 |
650 |
10A @125°C |
6.3 |
20 |
120V @125°C |
ITO-220AB |
|
CS20L200CT |
20 |
200 |
|
860 |
10A @ 25°C |
|
0.1 |
200V @ 25°C |
180 |
TO-220AB |
|
660 |
720 |
10A @125°C |
|
10 |
200V @ 125°C |
ITO-220AB |
|
CS30L40CT |
30 |
40 |
450 |
500 |
15A @ 25°C |
0.06 |
0.5 |
40V @ 25°C |
250 |
TO-220AB |
|
420 |
450 |
15A @125°C |
|
100 |
40V @ 125°C |
ITO-220AB |
|
CS30L45CT |
30 |
45 |
450 |
500 |
15A @ 25°C |
0.06 |
0.5 |
40V @ 25°C |
250 |
TO-220AB |
|
420 |
450 |
15A @125°C |
|
100 |
40V @ 125°C |
ITO-220AB |
|
CS30L50CT |
30 |
50 |
|
550 |
15A @ 25°C |
|
0.5 |
50V @ 25°C |
260 |
TO-220AB |
|
|
500 |
15A @125°C |
|
100 |
50V @ 125°C |
ITO-220AB |
|
CS30L60CT |
30 |
60 |
510 |
600 |
15A @ 25°C |
0.08 |
0.5 |
60V @ 25°C |
250 |
TO-220AB |
|
530 |
550 |
15A @125°C |
|
60 |
60V @ 125°C |
ITO-220AB |
|
CS30L120CT |
30 |
120 |
710 |
830 |
15A @ 25°C |
0.022 |
0.1 |
120V @ 25°C |
250 |
TO-220AB |
|
650 |
680 |
15A @125°C |
5 |
20 |
120V @ 125°C |
ITO-220AB |
The CITC has profound discrete semiconductor components and production process technology and experience based on 400 plus related patents. Its high power Schottky diode structure technology has won the award of excellent BIR manufacturer from the Department of Industrial Technology, MOEA, Taiwan.
CITC's process technology is unique in its applying the semiconductor production process to break the physical constraints bore by traditional Schottky diode components for concurrent Low VF, low leakage current and High breakdown voltage.
In addition to standard Schottky diode products, the CITC can provide Super Low VF (VF<0.32V) and High Power (VB>300V) ones as well as custom products to meet specific customer needs. The super low forward bias and high voltage Schottky diode products are widely adopted not only by domestic but also multiple international firms.
Recently, environment protection, green, energy saving and carbon reduction are highly recognized by every industry as indicated by more demanding energy conversion efficiency of electronic products. The CITC has been undertaking to improve product quality and comply with the RoHS international environment protection standards for Halogen-free process and to develop Schottky diodes of still lower forward bias voltage for better energy conversion efficiency.
