Chip Integration Technology Corporation >> Low Vf Rectifier- Super Low Vf MOS Rectifer

Low Vf Rectifier- Super Low Vf MOS Rectifer

Name: Low Vf Rectifier- Super Low Vf MOS Rectifer
Brand: China-Manufacturer-Directory.com
SKU: 669054741
Availability: InStock
Rating: 4.6 (131 reviews)

Supplier:	Chip Integration Technology Corporation
Price:	Negotiable/Piece
Min Order:	10000/Piece
Quantity::
Trade Terms:	FOB

Product Specifications

Prod Model:	CSP8S60SG/ CSP10S45SG/ CSP10S100SG/ CSP12S120SG
Material:	Compound Semiconductor

Product Description

Part No.: CSP8S60SG/ CSP10S45SG/ CSP10S100SG/ CSP12S120SG/ CS20S40CT/ CS20S60CT/ CS40S45CT/ CS40S60CT/ CS40S100CT/ CS40S120CT

Super Low VF MOS Rectifier offer ultra low forward voltage drop with a selectively rated 200 degrees C maximum junction temperature for improved efficiency and high reliability.

Feature:
1) Very low high-temperature reverse leakage characteristics unlike traditional Schottky rectifiers.
2) Large safe operating area (SOA) with maximum selectively rated 200 degrees C junction temperature for higher reliability.
3) High forward surge current rating (IFSM) to prevent against current surges and lightning strikes.
4) Ideal for standard silicon solar panel applications.

Part Number	IO(A)	VR(V)	VF(Max)			IR(Max)			IFSM(A)	Package
Part Number	IO(A)	VR(V)	Typ(mV)	Max(mV)	IFM(A)	Typ(mA)	Max(mA)	VR(V)	IFSM(A)	Package
CSP8S60SG	8	60	460	530	8A @ 25°C	0.12	0.6	60V @ 25°C	280	TO-277
CSP8S60SG	8	60		500	8A @125°C		100	60V @125°C	280	TO-277
CSP10S45SG	10	45	400	420	8A @ 25°C	0.051	0.3	45V @ 25°C	275	TO-277
			420	470	10A @ 25°C	5	15	45V @100°C
			370	410	10A @125°C	27	75	45V @150°C
CSP10S100SG	10	100		700	10A @ 25°C		0.5	100V @ 25°C	200	TO-277
CSP10S100SG	10	100	570	630	10A @125°C		25	100V @125°C	200	TO-277
CSP12S120SG	12	120		800	12A @ 25°C		0.25	120V @ 25°C	250	TO-277
CSP12S120SG	12	120	630	680	12A @125°C	2	35	120V @125°C	250	TO-277
CS20S40CT	20	40		470	10A @ 25°C		0.5	40V @ 25°C	200	TO-220AB
CS20S40CT	20	40	410	440	10A @125°C		100	40V @125°C	200	ITO-220AB
CS20S60CT	20	60		570	10A @ 25°C		0.5	40V @ 25°C	200	TO-220AB
CS20S60CT	20	60	450	470	10A @125°C		100	40V @125°C	200	ITO-220AB
CS40S45CT	40	45	470	520	20A @ 25°C	0.2	0.6	45V @ 25°C	280	TO-220AB
CS40S45CT	40	45		490	20A @125°C		200	45V @125°C	280	ITO-220AB
CS40S60CT	40	60	550	600	20A @ 25°C	0.07	0.5	60V @ 25°C	280	TO-220AB
CS40S60CT	40	60	540	570	20A @125°C	15	100	60V @125°C	280	ITO-220AB
CS40S100CT	40	100	670	720	20A @ 25°C		0.5	100V @ 25°C	235	TO-220AB
CS40S100CT	40	100	600	640	20A @125°C		40	100V @125°C	235	ITO-220AB
CS40S120CT	40	120		860	20A @ 25°C		0.5	120V @ 25°C	300	TO-220AB
CS40S120CT	40	120		710	20A @125°C		40	120V @125°C	300	ITO-220AB

The CITC has profound discrete semiconductor components and production process technology and experience based on 400 plus related patents. Its high power Schottky diode structure technology has won the award of excellent BIR manufacturer from the Department of Industrial Technology, MOEA, Taiwan.

CITC's process technology is unique in its applying the semiconductor production process to break the physical constraints bore by traditional Schottky diode components for concurrent Low VF, low leakage current and High breakdown voltage.

In addition to standard Schottky diode products, the CITC can provide Super Low VF (VF<0.32V) and High Power (VB>300V) ones as well as custom products to meet specific customer needs. The super low forward bias and high voltage Schottky diode products are widely adopted not only by domestic but also multiple international firms.

Recently, environment protection, green, energy saving and carbon reduction are highly recognized by every industry as indicated by more demanding energy conversion efficiency of electronic products. The CITC has been undertaking to improve product quality and comply with the RoHS international environment protection standards for Halogen-free process and to develop Schottky diodes of still lower forward bias voltage for better energy conversion efficiency.